Measurement Data - Total Ionizing Dose Effects on Variability in 40 nm Bulk CMOS Ring Oscillators

This repository contains experimental measurement data supporting the analysis presented in the associated IEEE Transactions on Nuclear Science publication. The dataset captures time-domain oscillation frequency measurements of CMOS ring oscillators fabricated in a commercial 40 nm bulk CMOS technology and exposed to X-ray Total Ionizing Dose (TID) irradiation up to 100 Mrad(SiO₂). The primary objective of the dataset is to enable a statistical investigation of circuit-to-circuit frequency variability as a function of radiation dose, supply voltage, and post-irradiation annealing.