Measurement Data - Ionizing radiation influence on 28-nm MOS transistor's low-frequency noise characteristics

Electronic noise limits the accuracy of measurements and sets a lower limit on how small signals can be detected and processed in an electronic circuit. Therefore, noise is an important parameter for determining the performance of a MOSFET transistor and the understanding of its characteristics from measurements as well as its evolution with aging is so essential. 

This data repository entry contains measurements of low frequency noise and random telegraph noise in as-processed transistors and after their exposures to extreme doses of ionizing radiation of 1 Mrad, that were published in the Journal of Instrumentation, available open access with details in [1] (referenced under related works). Further details are indicated in the metadata.pdf.

[1] Apro, M., and A. Michalowska-Forsyth. "Ionizing radiation influence on 28-nm MOS transistor's low-frequency noise characteristics." Journal of Instrumentation 19.01 (2024): C01042.